TLP291 consists of photo transistor, optically coupled to a gallium arsenide?infrared emitting diode. TLP291 is housed in the SO4 package, very small?and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ?C)?and high isolation voltage (3750Vrms), it’s suitable for high-density surface?mounting applications such as small switching power supplies and?programmable controllers.
●? Collector-Emitter Voltage : 80 V (min)
●? Current Transfer Ratio : 50% (min)
? ? ? ? ? ? ? ? ? ? ? ? ?Rank GB : 100% (min)
●? Isolation Voltage : 3750 Vrms (min)
●? Operation temperature: -55 to 110 ?C
●? UL recognized : UL1577, File No. E67349
●? cUL approved : CSA Component Acceptance Service No.5A,
? ? ? ? ? ? ? ? ? ? ? ? ? ? ?File No. 67349
●? SEMKO aprroved: EN 60065: 2002, Approved no. 1200315
? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? EN 60950-1: 2001, EN 60335-1: 2002,
? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? Approved no. 1200315
●? BSI approved : BS EN 60065: 2002, Approved no. 9036
? ? ? ? ? ? ? ? ? ? ? ? ? ?: BS EN 60950-1: 2006, Approved no. 9037
●? Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When a EN 60747-5-5 approved type is needed,?please designate the “Option(V4)”
Construction Mechanical Rating
Creepage distance:5.0mm(min)
Clearance:5.0mm(min)
Insultion thickness:0.4mm(min)
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Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.